?2004 osaoptolightgmbh?tel.+49(0)3065762683? fax+49(0)3065762681?contact@osaopto.com yellow item no.: 171282 1. thisspecificationappliestoalingap/gaasled chips 2. structure 2.1 mesastructure 2.2 electrodes pside(anode) aualloyoral nside(cathode) aualloy 3. outlines(dimensionsinmicrons) chipthicknesscouldalsobe180mor210m wirebondcontactscanalsobesquare 4. electricalandopticalcharacteristics(t=25c) parameter symbol conditions min typ max unit forwardvoltage v f i f =20ma 2,10 2,40 v reversecurrent i r v r =5v 10 m a luminousintensity* i v i f =10ma 55 mcd dom.wavelength l d i f =20ma 580 nm *onrequest,waferswillbedeliveredaccordingt oluminousintensityclasses brightnessmeasurementatosaongoldplate 5. packing diceonadhesivefilmwith1)wirebondsideonto p 2)backcontactontop 6. labeling type lotno. i v typ quantity min max pelectrode 250 epitaxyalingap nsubstrategaas nelectrode 235 235 110
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